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Fundamentals of III-V Semiconductor MOSFETs

:	Serge Oktyabrsky, Peide Ye
:	Serge Oktyabrsky, Peide Ye
:	Fundamentals of III-V Semiconductor MOSFETs
:	Springer-Verlag
:	9781441915474
:	1
:	CHF 135.40
:

:	Elektronik, Elektrotechnik, Nachrichtentechnik
:	English

:	445
:	Wasserzeichen/DRM
:	PC/MAC/eReader/Tablet
:	PDF

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO₂ on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO₂ on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

	Preface	5
	Contents	8
	Contributors	12
	Non-Silicon MOSFET Technology: A Long Time Coming	15
	Abstract	15
	1.1 Introduction	15
	1.2 Brief and Non-Comprehensive History of the NSMOSFET	16
	1.3 Surface Fermi Level Pinning: The Bane of NSMOSFET Technology Development	17
	1.4 Concluding Remarks	20
	References	20
	Properties and Trade-Offs of Compound Semiconductor MOSFETs	21
	2.1 Introduction	21
	2.2 Simulation Framework	24
	2.2.1 Bandstructure Calculation (Real and Complex)	24
	2.2.2 Band-to-Band Tunneling (Off-State Leakage)	25
	2.2.3 Quantum Ballistic Current (On-State Drive Current)	27
	2.3 Power-Performance Tradeoffs in Binary III-V Materials (GaAs, InAs, InP and InSb) vs. Si and Ge	29
	2.3.1 Inversion Charge and Injection Velocity	29
	2.3.2 ION., IOFF, BTBT and Delay	30
	2.3.3 Effect of Scaling Film Thickness and VDD	31
	2.3.4 Power-Performance Tradeoff of Binary III-V Materials vs. Si and Ge	32
	2.4 Power-Performance of Strained Ternary III-V Material (InxGa1-xAs)	33
	2.4.1 Strained InGaAs Band Structures	33
	2.4.2 ION and IOFF,BTBT with Strain Engineering and Channel Orientation	34
	2.4.3 Power-Performance of Strained Ternary III-V Material (InGaAs)	35
	2.5 Strained III-V for p-MOSFETs	36
	2.5.1 Hole Mobility in Ternary III-V Materials (InGaAs vs. InGaSb)	36
	2.5.2 Hole Mobility Enhancement in III-Vs with Strain	37
	2.6 Novel Device Structure and Parasitics	38
	2.6.1 Quantum Well (QW) Strained Heterostructure III-V FETs	38
	2.6.2 Parasitic Resistance	39
	2.6.3 Parasitic Capacitance	40
	2.7 Conclusion	41
	Device Physics and Performance Potential of III-V Field-Effect Transistors	45
	3.1 Introduction	45
	3.2 InGaAs HEMTs	46
	3.2.1 Device Structure	46
	3.2.2 Simulation Approach	48
	3.2.3 Materials Parameters	48
	3.2.4 Results	49
	3.3 Discussion	50
	3.3.1 Gate Capacitance	50
	3.3.2 Charge Control in a Nanoscale HEMT	52
	3.3.3 Velocity at the Virtual Source	53
	3.3.4 Ballistic Mobility	54
	3.3.5 Source Design Issues	55
	3.3.6 Role of S/D Tunneling	56
	3.3.7 Back of the Envelope Calculations	58
	3.4 Conclusions	60
	Theory of HfO2-Based High-k Dielectric Gate Stacks	64
	4.1 Introduction	64
	4.2 Theoretical Background	65
	4.2.1 Density Functional Theory	65
	4.2.2 Modeling Interfaces and Surfaces	68
	4.3 Properties of Bulk Hafnia and Zirconia	70
	4.4 Surfaces	84
	4.4.1 Monoclinic Hafnia	85
	4.4.2 Tetragonal Hafnia	91
	4.4.3 Role of Surface Energy in the M–T Transformation	93
	4.5 Band Alignment at Hafnia Interfaces	94
	4.5.1 SiO2.../.HfO2 Interface	95
	4.5.2 Effects of Al Doping at the SiO2./HfO2 Interface	97
	4.5.3 Thermal Stability and Fermi Level Pinning at the HfO2./Metal Interface	99
	4.6 Conclusions	102
	Density Functional Theory Simulations of High-k Oxides on III-V Semiconductors	105
	5.1 Introduction	105
	5.1.1 High-k Oxides	105
	5.1.2 III-V Semiconductors	106
	5.1.3 Density-Functional Theory	107
	5.2 Methodology of DFT Simulations of High-k Oxides on Semiconductor Substrates	108
	5.2.1 Oxide Deposition Technique in DFT Simulations	108
	5.2.2 Oxide-Semiconductor Stack Design	110
	5.2.3 Crystalline vs. Amorphous Oxides in DFT Simulations	113
	5.2.4 The Oxide-Semiconductor Stack Simulation Techniques: DFT Relaxation vs. Molecular Dynamics	115
	5.3 DFT Simulations of High-k Oxides on Si/Ge Substrates	118
	5.4 Generation of Amorphous High-k Oxide Samples by Hybrid Classical-DFT Molecular Dynamics Computer Simulations	124
	5.5 The Current Progress in DFT Simulations of High-k Oxide/III-V Semiconductor Stacks